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(R)
BC847B BC847C
SMALL SIGNAL NPN TRANSISTORS
PRELIMINARY DATA
Type BC847B BC847C
s
Marking 1F 1G
s
s s
SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING BC847B - THE PNP COMPLEMENTARY TYPE IS BC857B SOT-23
APPLICATIONS WELL SUITABLE FOR PORTABLE EQUIPMENT s SMALL LOAD SWITCH TRANSISTORS WITH HIGH GAIN AND LOW SATURATION VOLTAGE
s
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Total Dissipation at T C = 25 o C Storage Temperature Max. Operating Junction Temperature Value 50 45 6 100 200 250 -65 to 150 150 Unit V V V mA mA mW
o o
C C
June 2002
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BC847B / BC847C
THERMAL DATA
R thj-amb * Thermal Resistance Junction-Ambient
2
Max
500
o
C/W
* Device mounted on a PCB area of 1 cm .
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CBO I EBO V (BR)CBO Parameter Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Collector-Base Breakdown Voltage (I E = 0) Test Conditions V CB = 30 V V CB = 30 V V EB = 5 V I C = 10 A 50 T C = 150 o C Min. Typ. Max. 15 5 100 Unit nA A nA V
V (BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain
I C = 2 mA
45
V
I E = 10 A
6
V
V CE(sat) V BE(sat) V BE(on) h FE
I C = 10 mA I C = 100 mA I C = 10 mA I C = 100 mA I C = 2 mA I C = 10 mA I C = 10 A for BC847B for BC847C I C = 2 mA for BC847B for BC847C IE = 0
I B = 0.5 mA I B = 5 mA I B = 0.5 mA I B = 5 mA V CE = 5 V V CE = 5 V V CE = 5 V 0.58
0.09 0.2 0.7 0.9 0.66
0.25 0.6
V V V V
0.7 0.77
V V
150 270 V CE = 5 V 200 420 100 2.5 2 10 290 520 450 800 MHz pF dB
fT C CBO NF
Transition Frequency Collector-Base Capacitance Noise Figure
I C = 10 mA V CE = 5 V f = 100MHz V CB = 10 V f = 1 MHz
V CE = 5 V IC = 0.2 mA f = 1KHz f = 200 Hz R G = 2 K Pulsed: Pulse duration = 300 s, duty cycle 2 %
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BC847B / BC847C
SOT-23 MECHANICAL DATA
mm MIN. A B C D E F G H L M N O 0.85 0.65 1.20 2.80 0.95 1.9 2.1 0.38 0.3 0 0.3 0.09 TYP. MAX. 1.1 0.95 1.4 3 1.05 2.05 2.5 0.48 0.6 0.1 0.65 0.17 MIN. 33.4 25.6 47.2 110.2 37.4 74.8 82.6 14.9 11.8 0 11.8 3.5 mils TYP. MAX. 43.3 37.4 55.1 118 41.3 80.7 98.4 18.8 23.6 3.9 25.6 6.7
DIM.
0044616/B
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BC847B / BC847C
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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